Semiconductor component with increased dielectric strength and/or reduced on resistance
US7091557B2 · kind B2 · utility
21Cited by
2References
24Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 2, 2004 |
| Grant date | Aug 15, 2006 |
| Priority date | — |
| Expiry date | Apr 24, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/519
Abstract
The invention relates to a semiconductor component having a first semiconductor zone of a first conduction type, a second semiconductor zone of a second conduction type and a drift zone arranged between the first and second semiconductor zones, which drift zone has at least two semiconductor zones doped complementarily to one another, the degree of compensation varying at least in a section of the drift zone in a direction perpendicular to a current flow direction running between the first and second semiconductor zones.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.