Semiconductor laser device, optical disk apparatus and optical integrated unit
US7092423B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 25, 2004 |
| Grant date | Aug 15, 2006 |
| Priority date | — |
| Expiry date | Aug 4, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2304/04
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser device includes: a first cladding layer, which is made of a nitride semiconductor of a first conductivity type and is formed over a substrate; an active layer, which is made of another nitride semiconductor and is formed over the first cladding layer; and a second cladding layer, which is made of still another nitride semiconductor of a second conductivity type and is formed over the active layer. A spontaneous-emission-absorbing layer, which is made of yet another nitride semiconductor of the first conductivity type and has such an energy gap as absorbing spontaneous emission that has been radiated from the active layer, is formed between the substrate and the first cladding layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.