Patent · US Expired

Method for minimizing the vapor deposition of tungsten oxide during the selective side wall oxidation of tungsten-silicon gates

US7094637B2 · kind B2 · utility

1Cited by

3References

21Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Olaf Storbeck · Dresden, DE
Wilhelm Kegel · Laichingen, DE
Jens-Uwe Sachse · Dresden, DE
Michael Stadtmüller · Dresden, DE
Regina Hayn · Bernsdorf, DE
Erwin Schoer · Dresden, DE
Georg Roters · Schneverdingen, DE
Steffen Frigge · Chemnitz, DE

Key dates

Filing date	Oct 27, 2003
Grant date	Aug 22, 2006
Priority date	—
Expiry date	Jan 30, 2024

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/28061
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

During a selective oxidation of gate structures that includes a polycrystalline silicon layer and a tungsten layer, which is known per se, a vapor deposition of tungsten oxide is prevented or at least greatly reduced by a special process. The gate structure is acted on by a hydrogen-containing, nonaqueous inert gas before and, if appropriate, after a treatment step with a hydrogen/water mixture.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.