Method of plasma etching of high-K dielectric materials
US7094704B2 · kind B2 · utility
9Cited by
21References
42Claims
0Family size
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Key dates
| Filing date | May 9, 2002 |
| Grant date | Aug 22, 2006 |
| Priority date | — |
| Expiry date | Dec 6, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31122
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of etching high dielectric constant materials using a halogen gas, a reducing gas and an etch rate control gas chemistry.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.