High K artificial lattices for capacitor applications to use in Cu or Al BEOL
US7095073B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 25, 2004 |
| Grant date | Aug 22, 2006 |
| Priority date | — |
| Expiry date | Dec 14, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An improved and new process of fabricating high dielectric constant MIM capacitors. These high dielectric constant MIM capacitor met all of the stringent requirements needed for both for both RF and analog circuit applications. For the high dielectric constant MIM capacitor, the metal is comprised of copper electrodes in a dual damascene process. The dielectric constant versus the total thickness of super lattices is controlled by the number of layers either 4/4, 2/2, and 1/1 artificial layers. Hence thickness of the film can be easily controlled. Enhancement of dielectric constant is because of interface. Dielectric constants near 900 can be easily achieved for 250 Angstrom thick super lattices. MBE, molecular beam epitaxy or ALCVD, atomic layer CVD techniques is used for this type layer growth process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.