GaN boule grown from liquid melt using GaN seed wafers
US7097707B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 23, 2002 |
| Grant date | Aug 29, 2006 |
| Priority date | — |
| Expiry date | Jul 22, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49146
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of making a single crystal GaN boule, comprising contacting a GaN seed wafer with a GaN source environment under process conditions including a thermal gradient in the GaN source environment producing growth of gallium nitride on the GaN seed wafer, thereby forming the GaN boule. The GaN source environment in various implementations includes gallium melt in an ambient atmosphere of nitrogen or ammonia, or alternatively, supercritical ammonia containing solubilized GaN. The method produces single crystal GaN boules >10 millimeters in diameter, of device quality suitable for production of GaN wafers useful in the fabrication of microelectronic, optoelectronic and microelectromechanical devices and device precursor structures therefor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.