Single crystal silicon wafer having an epitaxial layer substantially free from grown-in defects
US7097718B2 · kind B2 · utility
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22Claims
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Key dates
| Filing date | May 20, 2003 |
| Grant date | Aug 29, 2006 |
| Priority date | — |
| Expiry date | Sep 15, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1004
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Epitaxial wafers comprising a single crystal silicon substrate comprising agglomerated vacancy defects and having an axially symmetric region in which silicon self-interstitials are the predominant intrinsic point defect and which is substantially free of agglomerated defects, and an epitaxial layer which is deposited upon a surface of the substrate and which is substantially free of grown-in defects caused by the presence of agglomerated intrinsic point defects on the substrate surface upon which the epitaxial layer is deposited.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.