Magnetic switching device

US7097777B2 · kind B2 · utility

Assignees

• Infineon Technologies AG · DE
• International Business Machines Corporation · US

Inventors

• Gregory Costrini · Hopewell Junction, US
• John P. Hummel · Millbrook, US
• George Stojakovic · Poughkeepsie, US
• Kia-Seng Low · Hopewell Junction, US

Key dates

• Filing date: Mar 2, 2005
• Grant date: Aug 29, 2006
• Expiry date: Mar 2, 2025

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N50/01
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

A method of forming a magnetic switching device is provided. The method includes depositing a bilayer hardmask, which may comprise a first mask layer of titanium nitride with a second mask layer of tungsten formed thereon. A first lithography process is performed to pattern the second mask layer, and a second lithography process is performed to pattern the first mask layer. Thereafter, the magnetic tunnel junction stack may be patterned in accordance with the first mask layer. An etching process may be performed to further pattern the first mask layer in accordance with the second mask layer. An optional passivation layer may be formed over the first mask layer and the second mask layer.