Patent · US Expired

Method for correcting local loading effects in the etching of photomasks

US7097947B2 · kind B2 · utility

1Cited by

3References

9Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Martin Blöcker · Birkenfeld, DE
Gerd Ballhorn · Höhenkirchen-Siegertsbrunn, DE
Jens Schneider · Bielefeld, DE

Key dates

Filing date	Jul 17, 2003
Grant date	Aug 29, 2006
Priority date	—
Expiry date	Jun 18, 2024

Classification

Technology area (CPC G)Physics
CPC primaryG03F1/36
WIPO fieldOptics
WIPO sectorInstruments

Abstract

A method for correcting local loading-effects in photomask etching includes the steps of determining the location-dependent density of structures of a mask; determining the location-dependent strength of the loading effect with the aid of the structure density; and determining location-dependent correction values for the mask structures with the aid of the strength of the loading effect for the purpose of compensating the loading effect. It is recognized that the strength of location-dependent loading effects can be predicted with the aid of the location-dependent structure density and therefore compensated.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.