Plasma processing method for working the surface of semiconductor devices
US7098138B2 · kind B2 · utility
1Cited by
7References
2Claims
0Family size
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Key dates
| Filing date | Apr 2, 2003 |
| Grant date | Aug 29, 2006 |
| Priority date | — |
| Expiry date | Apr 28, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/021
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma processing method is provided of processing a sample having a silicon nitride layer with high accuracy of size in anisotropy and excellent selectivity to a silicon oxide layer as underlayer. A mixed atmosphere of chlorine gas containing no fluorine with aluminum is converted into plasma in a plasma etching processing chamber and the sample having the silicon nitride layer is etched by using the plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.