Method and apparatus for accurate e-beam metrology
US7098456B1 · kind B1 · utility
2Cited by
5References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 13, 2004 |
| Grant date | Aug 29, 2006 |
| Priority date | — |
| Expiry date | Mar 3, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/2826
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
One embodiment disclosed relates to a method for accurate electron beam metrology. A substrate with a target feature is loaded into a scanning electron microscope. An electron beam is scanned over the target feature, and scattered electrons are detected therefrom. A characteristic of the target feature is measured by finding optimal values for parameters of a mathematical model which accounts for substrate charging effects. Principal component analysis may be used to advantageously result in reduced requirements for processing time and/or computational speed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.