High energy ESD structure and method
US7098509B2 · kind B2 · utility
15Cited by
20References
30Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 2, 2004 |
| Grant date | Aug 29, 2006 |
| Priority date | — |
| Expiry date | Jun 10, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/611
Abstract
In one embodiment, a concentric ring ESD structure includes a first p-type region and a second p-type region are formed in a layer of semiconductor material. The two p-type regions are coupled together with a floating n-type buried layer. The first and second p-type regions form a back-to-back diode structure with the floating n-type buried layer. A pair of shorted n-type and p-type contact regions is formed in each of the first and second regions. An isolation region is formed between the first and second p-type regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.