Measurement of optical properties of radiation sensitive materials
US7099018B2 · kind B2 · utility
4Cited by
4References
30Claims
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Assignee
Inventor
Key dates
| Filing date | Jan 12, 2004 |
| Grant date | Aug 29, 2006 |
| Priority date | — |
| Expiry date | Oct 14, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N21/41
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A system and method for measuring optical properties of films deposited or formed on semiconductor wafers. Measurements of an optical property are made in a plurality of non-overlapping locations within a test region of a film at a low radiation dose, and the measurements are averaged. The radiation dose is less than the actinic radiation sensitivity dose of the film, so that chemical changes in the film are not caused by the measurements. The measurements may be calibrated to prior art methods, and the results may be adjusted by the adjustment or calibration factor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.