Double-decker MRAM cells with scissor-state angled reference layer magnetic anisotropy and method for fabricating
US7099186B1 · kind B1 · utility
31Cited by
3References
20Claims
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Key dates
| Filing date | Feb 10, 2005 |
| Grant date | Aug 29, 2006 |
| Priority date | — |
| Expiry date | Feb 11, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/01
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A double-decker MRAM cell is provided, including a stacked structure of first and second magnetic tunnel junctions. Each magnetic tunnel junction includes free and fixed magnetic regions made of magnetic material separated by a tunneling barrier layer made of non-magnetic material. The fixed magnetic regions are pinned by at least one pinning layer made of the same antiferromagnetic material such that in applying an external magnetic field fixed magnetizations are brought into a scissored configuration.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.