Polishing system with in-line and in-situ metrology
US7101251B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 23, 2005 |
| Grant date | Sep 5, 2006 |
| Priority date | — |
| Expiry date | Jun 23, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/26
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A computer program product for process control in chemical mechanical polishing is described. The product includes instructions to cause a processor to receive a measurement of an initial pre-polishing thickness of a layer of a substrate from a metrology station, determine a value for a parameter of an endpoint algorithm from the initial thickness of the substrate, receive a monitoring signal generated from monitoring in-situ polishing of the substrate, process the monitoring signal to detect a signal feature indicating a final or intermediate endpoint and send instructions to stop polishing when an endpoint criterion is detected using the endpoint algorithm with the determined value for the parameter.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.