Methods for enhancing capacitors having roughened features to increase charge-storage capacity
US7101756B2 · kind B2 · utility
1Cited by
81References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 18, 2004 |
| Grant date | Sep 5, 2006 |
| Priority date | — |
| Expiry date | May 17, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/692
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Structures and methods for making a semiconductor structure are discussed. The semiconductor structure includes a rough surface having protrusions formed from an undoped silicon film. If the semiconductor structure is a capacitor, the protrusions help to increase the capacitance of the capacitor. The semiconductor structure also includes a relatively smooth surface abutting the rough surface, wherein the relatively smooth surface is formed from a polycrystalline material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.