Method of forming and/or modifying a dielectric film on a semiconductor surface

US7101812B2 · kind B2 · utility

Assignee

• Mattson Technology, Inc. · US

Inventors

• Ignaz Eisele · Icking, DE
• Alexandra Ludsteck · Birkenfeld, DE
• Jörg Schulze · Liegau-Augustusbad, DE
• Zsolt Nenyei · Blaustein, DE
• Waltraud Dietl · Illerkirchberg, DE
• Georg Roters · Schneverdingen, DE

Key dates

• Filing date: Mar 10, 2003
• Grant date: Sep 5, 2006
• Expiry date: Mar 10, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/0214
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A process for forming and/or modifying dielectric films on semiconductor substrates is disclosed. According to the present invention, a semiconductor wafer is exposed to a process gas containing a reactive component. The temperature to which the semiconductor wafer is heated and the partial pressure of the reactive component are selected so that, sometime during the process, diffusion of the reactive components occurs through the dielectric film to the film/semiconductor substrate interface. Further, diffusion also occurs of semiconductor atoms through the dielectric film to an exterior surface of the film. The process of the present invention has been found well suited to forming and/or modifying very thin dielectric films, such as films having a thickness of less than 8 nm.