Method and device for removing harmonics in semiconductor plasma processing systems
US7102292B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 3, 2004 |
| Grant date | Sep 5, 2006 |
| Priority date | — |
| Expiry date | Jan 19, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32183
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A system and method for maintaining a plasma in a plasma region by supplying RF power at a fundamental frequency to the plasma region together with a gas in order to create an RF electromagnetic field which interacts with the gas to create a plasma that contains electromagnetic energy components at frequencies that are harmonics of the fundamental frequency. The components at frequencies that are harmonics of the fundamental frequency are reduced by placing RF energy absorbing resistive loads in energy receiving communication with the plasma, the resistive loads having a frequency dependent attenuation characteristic such that the resistive loads attenuate electrical energy at frequencies higher than the fundamental frequency more strongly than energy at the fundamental frequency.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.