Magnetic memory device
US7102921B2 · kind B2 · utility
2Cited by
32References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 11, 2004 |
| Grant date | Sep 5, 2006 |
| Priority date | — |
| Expiry date | Sep 29, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1675
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present invention provides a magnetic memory device that includes a magnetic memory cell switchable between two states by the application of a magnetic field wherein the magnetic field for such switching is dependent in part on a memory cell temperature. The device further includes at least one heater element proximate to the magnetic memory cell and series connected with the magnetic memory cell for heating of the magnetic memory cell. The device also includes a circuit for selectively applying the electrical current through the at least one heater element so as to heat the cell and facilitate cell state-switching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.