Directed gas injection apparatus for semiconductor processing
US7103443B2 · kind B2 · utility
10Cited by
6References
17Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 20, 2002 |
| Grant date | Sep 5, 2006 |
| Priority date | — |
| Expiry date | May 4, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67017
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method and system for utilizing a gas injection plate comprising a number of shaped orifices (e.g., sonic and simple orifices, and divergent nozzles) in the gas inject system as part of a plasma processing system. By utilizing the shaped orifices, directionality of gas flow can be improved. This improvement is especially beneficial in high aspect ratio processing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.