Barrier removal at low polish pressure

US7104869B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Stan Tsai · Clifton Park, US
• Rashid Mavliev · Truckee, US
• Lizhong Sun · San Jose, US
• Feng Q. Liu · San Jose, US
• Liang-Yuh Chen · San Jose, US
• Ratson Morad · Palo Alto, US

Key dates

• Filing date: Jun 27, 2002
• Grant date: Sep 12, 2006
• Expiry date: Jul 27, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/3212
• WIPO field: Machine tools
• WIPO sector: Mechanical engineering

Abstract

The invention generally provides methods and compositions for planarizing a substrate surface having underlying dielectric materials. Aspects of the invention provide compositions and methods using a combination of low polishing pressures, polishing compositions, various polishing speeds, selective polishing pads, and selective polishing temperatures, for removing barrier materials by a chemical mechanical polishing technique with minimal residues and minimal seam damage. Aspects of the invention are achieved by employing a strategic multi-step process including sequential CMP at low polishing pressure to remove the deposited barrier materials.