Vertical photodiode with heavily-doped regions of alternating conductivity types

US7105373B1 · kind B1 · utility

Assignee

• NATIONAL SEMICONDUCTOR CORPORATION · US

Inventors

• Peter J. Hopper · San Jose, US
• Philipp Lindorfer · San Jose, US
• Vladislav Vashchenko · Palo Alto, US
• Andy Strachan · Santa Clara, US

Key dates

• Filing date: Aug 14, 2003
• Grant date: Sep 12, 2006
• Expiry date: Aug 14, 2023

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/547

Abstract

A single junction interdigitated photodiode utilizes a stack of alternating highly doped first regions of a first conductivity type and highly doped second regions of a second conductivity type, which are formed below and contact the first regions, to collect photons. In addition, a highly doped sinker of a first conductivity type contacts each first region, and a highly doped sinker of a second conductivity type contacts each second region.