Double sided container capacitor for a semiconductor device and method for forming same
US7105403B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 28, 2003 |
| Grant date | Sep 12, 2006 |
| Priority date | — |
| Expiry date | Oct 29, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
Abstract
A method for forming a double sided container capacitor comprises forming a first capacitor top plate layer within a recess in a dielectric layer, then forming a first cell dielectric on the first top plate layer. Next, first and second bottom plate layers are formed on the first cell dielectric layer, and a second cell dielectric layer is formed on the second bottom plate layers. Finally, a second top plate layer is formed on the second cell dielectric layer, and the first and second top plate layers are electrically connected using a conductive plug or conductive spacer. An inventive structure formed using the inventive method is also described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.