Method for the production of a bipolar transistor

US7105415B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Josef Bock · Birkenfeld, DE
• Thomas Meister · Taufkirchen, DE
• Reinhard Stengl · Stadtbergen, DE
• Herbert Schafer · Höhenkirchen-Siegertsbrunn, DE

Key dates

• Filing date: Jun 15, 2005
• Grant date: Sep 12, 2006
• Expiry date: Jun 15, 2025

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D10/891

Abstract

The invention relates to a method for producing a bipolar transistor. A semiconductor substrate is provided that encompasses a collector area of a first conductivity type, which is embedded therein and is bare towards the top. A monocrystalline base area is provided and a base-connecting area of the second conductivity type is provided above the base area. An insulating area is provided above the base-connecting area and a window is formed in the insulating area and the base-connecting area so as to at least partly expose the base area. An insulating sidewall spacer is provided in the window in order to insulate the base-connecting area. An emitter layer which forms a monocrystalline emitter area above the base area and a polycrystalline emitter area above the insulating area and the sidewall spacer is differentially deposited and structured, and a tempering step is carried out.