Semiconductor structure and method for integrating SOI devices and bulk devices
US7105897B2 · kind B2 · utility
12Cited by
1References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 28, 2004 |
| Grant date | Sep 12, 2006 |
| Priority date | — |
| Expiry date | Oct 28, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/201
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This invention discloses a method and a semiconductor structure for integrating at least one bulk device and at least one silicon-on-insulator (SOI) device. The semiconductor structure includes a first substrate having an SOI area and a bulk area, on which the bulk device is formed; an insulation layer formed on the first substrate in the SOI area; and a second substrate, on which the SOI device is formed, stacked on the insulation layer. The surface of the first substrate is not on the substantially same plane as the surface of the second substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.