Hao Chen
108Patents
12h-index
107Co-inventors
89Inventor score
Filing activity: Dec 6, 2002 → Mar 3, 2025
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6855606B2 | Semiconductor nano-rod devices | Electricity | 105 | Expired |
| US7074656B2 | Doping of semiconductor fin devices | Electricity | 98 | Expired |
| US6720619B1 | Semiconductor-on-insulator chip incorporating partially-depleted, fully-depleted, and multiple-gate devices | Electricity | 89 | Expired |
| US9086452B2 | Three-dimensional integrated circuit and method for wireless information access thereof | Electricity | 25 | Active |
| US7176092B2 | Gate electrode for a semiconductor fin device | Electricity | 20 | Expired |
| US7608515B2 | Diffusion layer for stressed semiconductor devices | Electricity | 18 | Active |
| US7141459B2 | Silicon-on-insulator ULSI devices with multiple silicon film thicknesses | Electricity | 16 | Expired |
| US7230270B2 | Self-aligned double gate device and method for forming same | Electricity | 16 | Expired |
| US7585711B2 | Semiconductor-on-insulator (SOI) strained active area transistor | Electricity | 15 | Active |
| US7635632B2 | Gate electrode for a semiconductor fin device | Electricity | 15 | Active |
| US7728360B2 | Multiple-gate transistor structure | Electricity | 15 | Expired |
| USD973820S1 | Swimming ring | General | 12 | Active |
| US7105897B2 | Semiconductor structure and method for integrating SOI devices and bulk devices | Electricity | 12 | Expired |
| US8865539B2 | Fully depleted SOI multiple threshold voltage application | Electricity | 11 | Active |
| US9341671B2 | Testing holders for chip unit and die package | Physics | 9 | Active |
| US7382023B2 | Fully depleted SOI multiple threshold voltage application | Electricity | 9 | Expired |
| US7423323B2 | Semiconductor device with raised segment | Electricity | 8 | Expired |
| US8421073B2 | Test structures for through silicon vias (TSVs) of three dimensional integrated circuit (3DIC) | Electricity | 8 | Active |
| US8922230B2 | 3D IC testing apparatus | Emerging Cross-Sectional Technologies | 8 | Active |
| US7701008B2 | Doping of semiconductor fin devices | Electricity | 8 | Active |
| US8957691B2 | Probe cards for probing integrated circuits | Physics | 7 | Active |
| US7948037B2 | Multiple-gate transistor structure and method for fabricating | Electricity | 6 | Active |
| US8053839B2 | Doping of semiconductor fin devices | Electricity | 6 | Active |
| US9664707B2 | Testing holders for chip unit and die package | Physics | 6 | Active |
| US9453877B2 | Testing holders for chip unit and die package | Physics | 6 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.