Technique for forming a spacer for a line element by using an etch stop layer deposited by a highly directional deposition technique

US7109086B2 · kind B2 · utility

Assignee

• Advanced Micro Devices, Inc. · US

Inventors

• Thorsten Kammler · Radeberg, DE
• Katja Huy · Dresden, DE
• Markus Lenski · Dresden, DE

Key dates

• Filing date: Nov 12, 2004
• Grant date: Sep 19, 2006
• Expiry date: Nov 12, 2024

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6715
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The present invention provides a technique that enables the formation of a recessed spacer element by using an anisotropically deposited etch stop layer. Accordingly, in subsequent cleaning processes, material residues of the etch stop layer may be efficiently removed from upper sidewall portions of a line element, thereby increasing the available area for a diffusion path in a subsequent silicidation process. The anisotropic deposition of the etch stop layer may be accomplished by high density plasma enhanced CVD or by directional sputter techniques.