System and method for lithography simulation
US7111277B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 4, 2004 |
| Grant date | Sep 19, 2006 |
| Priority date | — |
| Expiry date | Apr 19, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG21K5/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a technique of, and system for simulating, verifying, inspecting, characterizing, determining and/or evaluating the lithographic designs, techniques and/or systems, and/or individual functions performed thereby or components used therein. In one embodiment, the present invention is a system and method that accelerates lithography simulation, inspection, characterization and/or evaluation of the optical characteristics and/or properties, as well as the effects and/or interactions of lithographic systems and processing techniques. In this regard, in one embodiment, the present invention employs a lithography simulation system architecture, including application-specific hardware accelerators, and a processing technique to accelerate and facilitate verification, characterization and/or inspection of a mask design, for example, RET design, including detailed simulation and characterization of the entire lithography process to verify that the design achieves and/or provides the desired results on final wafer pattern. The system includes: (1) general purpose-type computing devi…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.