Patent · US Expired

Sub-micron space liner and densification process

US7112513B2 · kind B2 · utility

23Cited by
13References
49Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 19, 2004
Grant dateSep 26, 2006
Priority date—
Expiry dateJul 20, 2024

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/76224
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A method of depositing dielectric material into sub-micron spaces and resultant structures is provided. After a trench is etched in the surface of a wafer, an oxygen barrier is deposited into the trench. An expandable, oxidizable liner, preferably amorphous silicon, is then deposited. The trench is then filled with a spin-on dielectric (SOD) material. A densification process is then applied, whereby the SOD material contracts and the oxidizable liner expands. Preferably, the temperature is ramped up while oxidizing during at least part of the densification process. The resulting trench has a negligible vertical wet etch rate gradient and a negligible recess at the top of the trench.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.