Method of atomic layer deposition on plural semiconductor substrates simultaneously
US7112544B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 13, 2004 |
| Grant date | Sep 26, 2006 |
| Priority date | — |
| Expiry date | Aug 18, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02326
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention includes a method for treating a plurality of discrete semiconductor substrates. The discrete semiconductor substrates are placed within a reactor chamber. While the substrates are within the chamber, they are simultaneously exposed to one or more of H, F and Cl to remove native oxide. After removing the native oxide, the substrates are simultaneously exposed to a first reactive material to form a first mass across at least some exposed surfaces of the substrates. The first reactive material is removed from the reaction chamber, and subsequently the substrates are exposed to a second reactive material to convert the first mass to a second mass. The invention also includes apparatuses which can be utilized for simultaneous ALD treatment of a plurality of discrete semiconductor substrates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.