Energy adjusted write pulses in phase-change memories
US7113424B2 · kind B2 · utility
22Cited by
4References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 23, 2004 |
| Grant date | Sep 26, 2006 |
| Priority date | — |
| Expiry date | Nov 23, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2029/5002
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory cell device that includes a plurality of phase-change memory cells, at least one write pulse generator, and at least one temperature sensor. The plurality of phase-change memory cells are each capable of defining at least two states. The write pulse generator generates a write pulse for the plurality of phase-change memory cells. The temperature sensor is capable of sensing temperature. The write pulse generator adjusts the write pulse for the plurality of phase-change memory cells with the temperature sensed by the temperature sensor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.