Cyclical deposition of tungsten nitride for metal oxide gate electrode

US7115499B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Shulin Wang · Campbell, US
• Ulrich Kroemer · Jena, DE
• Lee Luo · Fremont, US
• Aihua Chen · Fremont, US
• Ming Li · Ningbo City, CN

Key dates

• Filing date: Dec 1, 2004
• Grant date: Oct 3, 2006
• Expiry date: Dec 1, 2024

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B12/038
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A method for depositing a tungsten nitride layer is provided. The method includes a cyclical process of alternately adsorbing a tungsten-containing compound and a nitrogen-containing compound on a substrate. The barrier layer has a reduced resistivity, lower concentration of fluorine, and can be deposited at any desired thickness, such as less than 100 angstroms, to minimize the amount of barrier layer material.