Epitaxial semiconductor deposition methods and structures
US7115521B2 · kind B2 · utility
15Cited by
17References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 18, 2004 |
| Grant date | Oct 3, 2006 |
| Priority date | — |
| Expiry date | Nov 18, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02661
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for depositing epitaxial films such as epitaxial Ge and SiGe films. During cooling from high temperature processing to lower deposition temperatures for Ge-containing layers, Si or Ge compounds are provided to the substrate. Smooth, thin, relatively defect-free Ge or SiGe layers result. Retrograded relaxed SiGe is also provided between a relaxed, high Ge-content seed layer and an overlying strained layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.