Matthias Bauer
60Patents
15h-index
66Co-inventors
87Inventor score
Filing activity: Oct 10, 2003 → Feb 23, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8367528B2 | Cyclical epitaxial deposition and etch | Electricity | 557 | Active |
| US8278176B2 | Selective epitaxial formation of semiconductor films | Electricity | 540 | Active |
| US7939447B2 | Inhibitors for selective deposition of silicon containing films | Electricity | 510 | Active |
| US8809170B2 | High throughput cyclical epitaxial deposition and etch process | Electricity | 402 | Active |
| US7208354B2 | Deposition of silicon germanium on silicon-on-insulator structures and bulk substrates | Electricity | 109 | Expired |
| US7863163B2 | Epitaxial deposition of doped semiconductor materials | Electricity | 107 | Active |
| US7816236B2 | Selective deposition of silicon-containing films | Electricity | 36 | Active |
| US9312131B2 | Selective epitaxial formation of semiconductive films | Electricity | 35 | Active |
| US7238595B2 | Epitaxial semiconductor deposition methods and structures | Electricity | 33 | Expired |
| US7438760B2 | Methods of making substitutionally carbon-doped crystalline Si-containing materials by chemical vapor deposition | Electricity | 29 | Expired |
| US7329593B2 | Germanium deposition | Emerging Cross-Sectional Technologies | 25 | Expired |
| US6975935B2 | Method and device for monitoring the direction of rotation of a piston engine | Mechanical Engineering; Lighting; Heating | 22 | Expired |
| US9853129B2 | Forming non-line-of-sight source drain extension in an nMOS finFET using n-doped selective epitaxial growth | Electricity | 17 | Active |
| US7402504B2 | Epitaxial semiconductor deposition methods and structures | Electricity | 16 | Active |
| US7682947B2 | Epitaxial semiconductor deposition methods and structures | Electricity | 15 | Active |
| US7115521B2 | Epitaxial semiconductor deposition methods and structures | Electricity | 15 | Expired |
| US7479443B2 | Germanium deposition | Emerging Cross-Sectional Technologies | 15 | Active |
| US8728239B2 | Methods and apparatus for a gas panel with constant gas flow | Emerging Cross-Sectional Technologies | 13 | Active |
| US8844571B2 | Fluid actuator for producing a pulsed outlet flow in the flow around an aerodynamic body, and discharge device and aerodynamic body equipped therewith | Emerging Cross-Sectional Technologies | 13 | Active |
| US9573679B2 | Fluid actuator for influencing the flow along a flow surface, as well as blow-out device and flow body comprising a like fluid actuator | Emerging Cross-Sectional Technologies | 12 | Active |
| US9618150B2 | Device for generating fluid pulses | Emerging Cross-Sectional Technologies | 11 | Active |
| US7289865B2 | Optimization algorithm to optimize within substrate uniformities | Electricity | 9 | Expired |
| US7514372B2 | Epitaxial growth of relaxed silicon germanium layers | Electricity | 8 | Expired |
| US7687383B2 | Methods of depositing electrically active doped crystalline Si-containing films | Electricity | 8 | Active |
| US7648853B2 | Dual channel heterostructure | Electricity | 6 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.