FinFET transistor and circuit
US7115920B2 · kind B2 · utility
163Cited by
9References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 12, 2004 |
| Grant date | Oct 3, 2006 |
| Priority date | — |
| Expiry date | Aug 10, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/405
Abstract
A drive strength tunable FinFET, a method of drive strength tuning a FinFET, a drive strength ratio tuned FinFET circuit and a method of drive strength tuning a FinFET, wherein the FinFET has either at least one perpendicular and at least one angled fin or has at least one double-gated fin and one split-gated fin.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.