Nonvolatile semiconductor memory device and manufacturing method thereof
US7115943B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 17, 2004 |
| Grant date | Oct 3, 2006 |
| Priority date | — |
| Expiry date | Dec 17, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/037
Abstract
A MONOS nonvolatile memory of a split gate structure, wherein writing and erasing are performed by hot electrons and hot holes respectively, is prone to cause electrons not to be erased and to remain in an Si nitride film on a select gate electrode sidewall and that results in the deterioration of rewriting durability. When long time erasing is applied as a measure to solve the problem, drawbacks appear, such as the increase of a circuit area caused by the increase of the erasing current and the deterioration of retention characteristics. In the present invention, an Si nitride film is formed by the reactive plasma sputter deposition method that enables oriented deposition and the Si nitride film on a select gate electrode sidewall is removed at the time when a top Si oxide film is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.