Complementary metal-oxide-semiconductor field effect transistor structure having ion implant in only one of the complementary devices

US7119381B2 · kind B2 · utility

Assignee

• Freeescale Semiconductor, Inc. · US

Inventor

• Matthias Passlack · Overijse, BE

Key dates

• Filing date: Jul 30, 2004
• Grant date: Oct 10, 2006
• Expiry date: Aug 2, 2024

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/038

Abstract

A complementary metal-oxide-semiconductor field effect transistor structure includes ion implants in only one of the two complementary devices. The transistor structure generally includes a compound semiconductor substrate and an epitaxial layer structure that includes one or more donor layers that establish a conductivity type for the epitaxial layer structure. The ion implants function to “invert” or “reverse” the conductivity type of the epitaxial layer structure in one of the complementary devices. In the example embodiment, p-type acceptor implants are utilized in the p-channel device, while the n-channel device remains implant-free.