Atomic layer deposition of interpoly oxides in a non-volatile memory device
US7122415B2 · kind B2 · utility
54Cited by
13References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 12, 2002 |
| Grant date | Oct 17, 2006 |
| Priority date | — |
| Expiry date | Sep 12, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28211
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Aluminum oxide is deposited by atomic layer deposition to form a high-k dielectric for the interpoly dielectric layer of a non-volatile memory device. The increased capacitive coupling can allow a thicker oxide layer to be used between the floating gate and the control gate, resulting in improved reliability and longer lifetime of the memory cells fabricated according to this invention.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.