Ching-Hwa Chen
22Patents
13h-index
29Co-inventors
81Inventor score
Filing activity: May 19, 1983 → Nov 5, 2010
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5356478A | Plasma cleaning method for removing residues in a plasma treatment chamber | Electricity | 820 | Expired |
| US5226967A | Plasma apparatus including dielectric window for inducing a uniform electric field in a plasma chamber | Electricity | 380 | Expired |
| US5234526A | Window for microwave plasma processing device | Electricity | 376 | Expired |
| US5368710A | Method of treating an article with a plasma apparatus in which a uniform electric field is induced by a dielectric window | Electricity | 116 | Expired |
| US5198725A | Method of producing flat ECR layer in microwave plasma device and apparatus therefor | Electricity | 95 | Expired |
| US5812361A | Dynamic feedback electrostatic wafer chuck | Emerging Cross-Sectional Technologies | 64 | Expired |
| US7122415B2 | Atomic layer deposition of interpoly oxides in a non-volatile memory device | Electricity | 54 | Expired |
| US5824605A | Gas dispersion window for plasma apparatus and method of use thereof | Electricity | 43 | Expired |
| US7910429B2 | Method of forming ONO-type sidewall with reduced bird's beak | Electricity | 29 | Expired |
| US6337277B1 | Clean chemistry low-k organic polymer etch | Electricity | 25 | Expired |
| US6221792A | Metal and metal silicide nitridization in a high density, low pressure plasma reactor | Electricity | 24 | Expired |
| US4513453A | Pre-tied necktie | Human Necessities | 19 | Expired |
| US4897887A | Preknotted adjustable necktie | Human Necessities | 14 | Expired |
| US7001810B2 | Floating gate nitridation | Electricity | 11 | Expired |
| US4835794A | Preset necktie | Emerging Cross-Sectional Technologies | 11 | Expired |
| US4856114A | Seaman style preset necktie | Human Necessities | 6 | Expired |
| US6787415B1 | Nonvolatile memory with pedestals | Electricity | 5 | Expired |
| US7387972B2 | Reducing nitrogen concentration with in-situ steam generation | Electricity | 3 | Expired |
| US7297597B2 | Method for simultaneously fabricating ONO-type memory cell, and gate dielectrics for associated high voltage write transistors and gate dielectrics for low voltage logic transistors by using ISSG | Electricity | 3 | Expired |
| US8283733B2 | Semiconductor devices with gate electrodes and with monocrystalline silicon regions that contain atoms of nitrogen and one or more of chlorine, bromine, sulfur, fluorine, or phosphorus | Electricity | 1 | Active |
| US7851339B2 | Method of repairing deep subsurface defects in a silicon substrate that includes diffusing negatively charged ions into the substrate from a sacrificial oxide layer | Electricity | 1 | Active |
| US7807577B2 | Fabrication of integrated circuits with isolation trenches | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.