Methods of fabricating semiconductor structures having epitaxially grown source and drain elements
US7122449B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 12, 2005 |
| Grant date | Oct 17, 2006 |
| Priority date | — |
| Expiry date | Apr 12, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/68
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for fabricating facetless semiconductor structures using commercially available chemical vapor deposition systems are disclosed herein. A key aspect of the invention includes selectively depositing an epitaxial layer of at least one semiconductor material on the semiconductor substrate while in situ doping the epitaxial layer to suppress facet formation. Suppression of faceting during selective epitaxial growth by in situ doping of the epitaxial layer at a predetermined level rather than by manipulating spacer composition and geometry alleviates the stringent requirements on the device design and increases tolerance to variability during the spacer fabrication.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.