Method for improving nitrogen profile in plasma nitrided gate dielectric layers
US7122454B2 · kind B2 · utility
12Cited by
6References
16Claims
0Family size
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Inventor
Key dates
| Filing date | Jun 12, 2003 |
| Grant date | Oct 17, 2006 |
| Priority date | — |
| Expiry date | Jun 12, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/913
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is provided wherein a gate dielectric film that is plasma nitrided in a chamber of one system is subsequently heated or “annealed” in another chamber of the same system. Processing delay can be controlled so that all wafers processed in the system experience similar nitrogen content.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.