Deposition profile modification through process chemistry
US7122485B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 9, 2002 |
| Grant date | Oct 17, 2006 |
| Priority date | — |
| Expiry date | Dec 9, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Disclosed are methods for modifying the topography of HDP CVD films by modifying the composition of the reactive mixture. The methods allow for deposition profile control independent of film deposition rate. They rely on changes in the process chemistry of the HDP CVD system, rather than hardware modifications, to modify the local deposition rates on the wafer. The invention provides methods of modifying the film profile by altering the composition of the reactive gas mixture, in particular the hydrogen content. In this manner, deposition profile and wiw uniformity are decoupled from deposition rate, and can be controlled without hardware modifications.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.