Method to improve yield and simplify operation of polymer memory cells
US7122853B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 17, 2004 |
| Grant date | Oct 17, 2006 |
| Priority date | — |
| Expiry date | Aug 17, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K19/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Systems and methodologies are provided for simplifying a polymer memory cell's operation by employing a post polymer growth treatment to form ionic or super ionic metal compounds therein. Such post polymer growth treatment facilitates distribution and mobility of metal ions (or charged metallic molecules) within an active layer of the polymer memory cell, and mitigates (or eliminates) a need for initialization procedures. Moreover, the post treatment of the present invention can also facilitate controlling a distribution of various thresholds (e.g., write and erase threshold), and set them to predetermined values Accordingly, variability in threshold values of polymer memory cells that can result from initialization processes can be mitigated (or eliminated), and thicker polymer layers can be employed without an initialization penalty.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.