Electrical programmable metal resistor
US7122898B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 9, 2005 |
| Grant date | Oct 17, 2006 |
| Priority date | — |
| Expiry date | May 9, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides an electrical programmable metal resistor and a method of fabricating the same in which electromigration stress is used to create voids in the structure that increase the electrical resistance of the resistor. Specifically, a semiconductor structure is provided that includes an interconnect structure comprising at least one dielectric layer, wherein said at least one dielectric layer comprises at least two conductive regions and an overlying interconnect region embedded therein, said at least two conductive regions are in contact with said overlying interconnect region by at least two contacts and at least said interconnect region is separated from said at least one dielectric layer by a diffusion barrier, wherein voids are present in at least the interconnect region which increase the electrical resistance of the interconnect region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.