Ultra high temperature hermetically protected wirebonded piezoresistive transducer
US7124639B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 21, 2005 |
| Grant date | Oct 24, 2006 |
| Priority date | — |
| Expiry date | Jun 21, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01L9/0055
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An ultra high temperature hermetically protected transducer includes a sensor chip having an active area upon which is deposited piezoresistive sensing elements. The elements are located on the top surface of the silicon wafer chip and have leads and terminals extending from the active area of the chip. The active area is surrounded with an extending rim or frame. The active area is coated with an oxide layer which passivates the piezoresistive sensing network. The chip is then attached to a glass pedestal, which is larger in size than the sensor chip. The glass pedestal has a through hole or aperture at each corner. The entire composite structure is then mounted onto a high temperature header with the metallized regions of the header being exposed to the holes in the glass pedestal; a high temperature lead is then bonded directly to the metallized contact area of the sensor chip at one end. The leads are of sufficient length to extend into the through holes in the glass pedestal. A sealing cover is then attached to the entire composite sensor to hermetically seal all of the interconnections. The sealing cover is a glass structure, has a central aperture which corresponds to the ap…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.