Process for preparing single crystal silicon using crucible rotation to control temperature gradient
US7125450B2 · kind B2 · utility
6Cited by
33References
75Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 31, 2003 |
| Grant date | Oct 24, 2006 |
| Priority date | — |
| Expiry date | Jun 6, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1076
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention is directed to a process for preparing single crystal silicon, in ingot or wafer form, wherein crucible rotation is utilized to control the average axial temperature gradient in the crystal, G0, as a function of radius (i.e., G0(r)), particularly at or near the central axis. Additionally, crucible rotation modulation is utilized to obtain an axially uniform oxygen content therein.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.