Polymers, resist compositions and patterning process
US7125641B2 · kind B2 · utility
9Cited by
3References
17Claims
0Family size
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Key dates
| Filing date | Feb 9, 2004 |
| Grant date | Oct 24, 2006 |
| Priority date | — |
| Expiry date | Jul 2, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0397
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A polymer comprising recurring units of (1a) or (1b) wherein R1 is an acid labile group, adhesive group or fluoroalkyl, R2 is H, F, alkyl or fluoroalkyl, R3 and R4 each are a single bond, alkylene or fluoroalkylene, R5 is H or an acid labile group, “a” is 1 or 2, 0<U11<1 and 0<U12<1 and having a Mw of 1,000–500,000 is used as a base resin to formulate a resist composition which is sensitive to high-energy radiation, maintains high transparency at a wavelength of up to 200 nm, and has improved alkali dissolution contrast and plasma etching resistance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.