CVD method and device for forming silicon-containing insulation film
US7125812B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 14, 2003 |
| Grant date | Oct 24, 2006 |
| Priority date | — |
| Expiry date | Jan 29, 2023 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/452
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A CVD apparatus (2) forms an insulating film, which is a silicon oxide film, silicon nitride film, or silicon oxynitride film. The CVD apparatus includes a process chamber (8) to accommodate a target substrate (W), a support member (20) to support the target substrate in the process chamber, a heater (12) to heat the target substrate supported by the support member, an exhaust section (39) to vacuum-exhaust the process chamber, and a supply section (40) to supply a gas into the process chamber. The supply section includes a first circuit (42) to supply a first gas of a silane family gas, a second circuit (44) to supply a second gas, which is an oxidizing gas, nitriding gas, or oxynitriding gas, and a third circuit (46) to supply a third gas of a carbon hydride gas, and can supply the first, second, and third gases together.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.