Patent · US Expired

Multi-electron beam exposure method and apparatus

US7126140B2 · kind B2 · utility

3Cited by
5References
9Claims
0Family size

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Key dates

Filing dateAug 30, 2005
Grant dateOct 24, 2006
Priority date
Expiry dateAug 30, 2025

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J2237/31767
  • WIPO fieldMicro-structural and nano-technology
  • WIPO sectorChemistry

Abstract

A multi-electron beam exposure method and apparatus, wherein electron beams are applied to a sample surface mounted on a traveling sample stage to perform repeated exposure of chip patterns. An exposure region of the sample surface is partitioned into multiple stripe regions having a width in an x-axis direction, and each of the multiple stripe regions is further partitioned into multiple main fields having a width in a y-axis direction. At least one of the widths of the main fields in the x- and y-axis directions is set to a value, and exposure pattern data for one chip based on the partitioned main fields is stored as a unit. The stored exposure pattern data is readout a number of times corresponding to the number of chips repeatedly, and each electron beam provides repeated exposure of same regions of the chips.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.