Nonvolatile semiconductor memory device and a method of the same
US7126184B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 8, 2005 |
| Grant date | Oct 24, 2006 |
| Priority date | — |
| Expiry date | Jun 8, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/0458
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A reduction in size nonvolatile semiconductors for use in a memory device and an increase in the capacity thereof are promoted. Each memory cell of a flash memory is provided with a field effect transistor having a first gate insulator film formed on a p-type well, a selector gate which is formed on the first insulator film and has side faces and a top face covered with a silicon oxide film (first insular film), floating gates which are formed in a side-wall form on both sides of the selector gate and which are electrically isolated from the selector gate through the silicon oxide film, a second gate insulator film formed to cover the silicon oxide film and the surface of each of the floating gates, and a control gate formed over the second gate insulator film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.